? semiconductor components industries, llc, 2002 april, 2002 rev. 1 1 publication order number: mbra120et3/d mbra120et3 surface mount schottky power rectifier sma power surface mount package . . . employing the schottky barrier principle in a metaltosilicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. ? compact package with jbend leads ideal for automated handling ? highly stable oxide passivated junction ? guardring for overvoltage protection ? optimized for low leakage current mechanical characteristics: ? case: molded epoxy ? epoxy meets ul94, v o at 1/8 ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? polarity: polarity band indicates cathode lead ? available in 12 mm tape, 5000 units per 13 inch reel ? marking: b1e2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 v average rectified forward current (at rated v r , t c = 125 c) i o 1.0 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 40 a storage/operating case temperature t stg , t c 55 to +150 c operating junction temperature t j 55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s device package shipping ordering information mbra120et3 sma 5000/tape & reel schottky barrier rectifier 1 ampere 20 volts sma case 403d plastic marking diagram b1e2 = device code b1e2 http://onsemi.com
mbra120et3 http://onsemi.com 2 thermal characteristics characteristic symbol 5 mm x 5 mm (note 2) 1 inch x 1/2 inch (note 3) unit thermal resistance junctiontolead thermal resistance junctiontoambient r q jl r q ja 34 138 20 77 c/w electrical characteristics maximum instantaneous forward voltage (note 1), see figure 2 v f t j = 25 c t j = 100 c v (i f = 0.1 a) (i f = 1.0 a) (i f = 2.0 a) 0.455 0.530 0.595 0.360 0.455 0.540 maximum instantaneous reverse current, see figure 4 i r t j = 25 c t j = 100 c a (v r = 20 v) (v r = 10 v) (v r = 5.0 v) 10 1.0 0.5 1600 500 300 1. pulse test: pulse width 250 m s, duty cycle 2%. 2. mounted on a pad size of 5 mm x 5 mm, pc board fr4 (2 pads). 3. mounted on a pad size of 1 inch x 1/2 inch, pc board fr4 (2 pads). 150 c 0.1 0.3 0.2 0.1 v f , instantaneous voltage (volts) v r , reverse voltage (volts) figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current 1 10 0 8 6 4 2 012 10 20 i r , reverse current (a) 0.1 0.4 0.3 0.2 0.1 0.6 v f , instantaneous voltage (volts) 1 10 0 0.5 14 16 18 0.6 0.5 0.4 0.7 1 0.9 0.8 i f , instantaneous forward current (a) 0.9 0.8 0.7 1 i f , instantaneous forward current (a) 1e08 1e07 1e06 1e05 1e04 1e03 1e02 v r , reverse voltage (volts) 8 6 4 2 012 10 20 i r , reverse current (a) 14 16 18 1e08 1e07 1e06 1e05 1e04 1e03 1e02 125 c 100 c 25 c 40 c 150 c 100 c 25 c 150 c 125 c 100 c 75 c 25 c 150 c 100 c 25 c
mbra120et3 http://onsemi.com 3 0.8 120 100 60 0 20 160 t l , lead temperature ( c) figure 5. current derating figure 6. forward power dissipation figure 7. thermal resistance 0.4 1.8 0 0.4 0 i o , average forward current (amps) 0.2 0.7 figure 8. typical junction capacitance 80 40 140 0.6 0.2 1 1.2 0.6 0.2 1.6 01 0.8 0.4 1.4 0.5 0.1 0.3 t, time (sec) 212 0 v r , reverse voltage (volts) 1000 100 10 8 r (t) , transient thermal resistance (normalized) 6 4 10 14 16 t j = 25 c 18 20 c, capacitance (pf) 0.6 p fo , average power dissipation (watts) dc square wave i f , average forward current (amps) 1.4 1.6 1.2 square wave dc 0.0001 0.00001 1 0.1 0.01 0.001 0.1 0.01 10 100 1000 1 0.001 d = 0.5 0.3 0.2 0.02 0.05 0.1 single pulse
mbra120et3 http://onsemi.com 4 package dimensions sma case 403d02 issue a sma footprint mm inches 0.157 4.0 0.0787 2.0 0.0787 2.0 s a db k j c h dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.090 0.115 2.29 2.92 c 0.075 0.095 1.91 2.41 d 0.050 0.064 1.27 1.63 h 0.002 0.006 0.05 0.15 j 0.006 0.016 0.15 0.41 k 0.030 0.060 0.76 1.52 s 0.190 0.220 4.83 5.59 polarity indicator optional as needed notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d-01 obsolete, new standard is 403d-02. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbra120et3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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